非线性氮化硅波导的带隙工程

C. Kruckel, A. Fülöp, P. Andrekson, V. Torres‐Company
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引用次数: 3

摘要

我们表明,控制SiN的带隙为非线性光学的工程波导提供了额外的自由度。优化后的结构γ·max Leff = 0.17 rad/W,无非线性损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bandgap engineering in nonlinear silicon nitride waveguides
We show that controlling the bandgap of SiN provides an additional degree of freedom for engineering waveguides for nonlinear optics. We show an optimized structure with γ· max Leff = 0.17 rad/W and absence of nonlinear loss.
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