堆叠和双材料栅极结构对SOI mosfet短沟道效应的影响

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1093/ietele/e88-c.6.1122

E. Fathi, A. Behnam, P. Hashemi, B. Esfandyarpour, M. Fathipour

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引用次数: 8

摘要

研究了一种非对称双金属堆叠栅极(DMSG) SOI MOSFET晶体管的增强电学特性。提出了一种二维物理模型，并与仿真结果相吻合。这些结果预测，与传统的SOI MOSFET相比，该器件具有更好的短通道效应，如漏极诱导势垒降低(DIBL)特性和热载子效应。

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The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETs

An asymmetric dual metal stack gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for the conventional SOI MOSFET.

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Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

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