具有低导通电阻和坚固栅极凹槽的增强型GaN双通道MOS-HEMT

Jin Wei, Sheng-gen Liu, Baikui Li, Xi Tang, Yunyou Lu, Cheng Liu, M. Hua, Zhaofu Zhang, Gaofei Tang, K. J. Chen
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引用次数: 43

摘要

在双通道异质结构上制备了一种增强型GaN双通道MOS-HEMT (DC-MOS-HEMT),其特点是在常规势垒/GaN异质界面下方6 nm处插入1.5 nm的AlN层(AlN- isl),在AlN- isl与底层GaN的界面处形成一个下通道。当栅极凹槽终止于上层GaN沟道层时,获得正阈值电压,而下层沟道由于保留异质结而保持其高2DEG迁移率。制造的器件提供小导通电阻,大电流,高击穿电压和尖锐的亚阈值摆幅。通过仿真和实验验证了浇口凹槽深度的较大公差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
An enhancement-mode GaN double-channel MOS-HEMT (DC-MOS-HEMT) was fabricated on a double-channel heterostructure, which features a 1.5-nm AlN layer (AlN-ISL) inserted 6 nm below the conventional barrier/GaN hetero-interface, forming a lower channel at the interface between AlN-ISL and the underlying GaN. With the gate recess terminated at the upper GaN channel layer, a positive threshold voltage is obtained, while the lower channel retains its high 2DEG mobility as the heterojunction is preserved. The fabricated device delivers a small on-resistance, large current, high breakdown voltage, and sharp subthreshold swing. The large tolerance for gate recess depth is also confirmed by both simulation and experiment.
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