2ghz FBAR压控振荡器中谐振器- qs缺陷的启动稳健性

K. B. Ostman, M. Valkama
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引用次数: 1

摘要

采用根轨迹法分析了两级双谐振腔高q压控振荡器的启动鲁棒性。VCO包括一个并联LC槽和一个ic上FBAR (fs = 2.15 GHz, Qs = 515),在ic上后处理过程中容易出现接触缺陷。经过仔细的电路建模后得到的结果解释了VCO在转换到所需频率f0之前在f1上启动并稳定下来的情况。RL方法在获得谐振腔q的约束条件和揭示VCO失效模式方面是有效的。只有严重的制造缺陷(q0)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Start-up robustness against resonator-Qs defects in a 2-GHz FBAR VCO
The root locus (RL) method is used to analyze the start-up robustness of a two-stage dual-resonator high-Q VCO. The VCO includes a parallel LC tank and an above-IC FBAR (fs = 2.15 GHz, Qs = 515) that is prone to contact defects during above-IC post-processing. Results obtained after careful circuit modeling explain the VCO's start-up on f1 before transitioning to and settling on the desired frequency f0. The RL approach is shown to be effective in obtaining the constraints on resonator Qs and revealing VCO failure modes. Only severe fabrication defects (Qs <; 100) inhibit proper start-up on f0.
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