P. Peterka, B. Dussardier, W. Blanc, I. Kašík, P. Honzátko
{"title":"用于光纤激光器和放大器的具有增强3H4能级寿命的掺铥硅光纤","authors":"P. Peterka, B. Dussardier, W. Blanc, I. Kašík, P. Honzátko","doi":"10.1109/ICP.2012.6379827","DOIUrl":null,"url":null,"abstract":"Thulium-doped fibers are renowned for their applications in high power fiber lasers at around 2 μm. It is despite the low quantum conversion efficiency of <sup>3</sup>F<sub>4</sub> level in thulium doped silica fibers, which is about 10% compared to ~100% quantum conversion efficiency of the ytterbium- and erbium-doped fibers, at around 1 μm and 1.5 μm, respectively. The lower quantum conversion efficiency increases the 2 μm laser threshold but has almost no effect on the laser slope efficiency. Indeed, kW-class thulium-doped fiber lasers have been demonstrated recently. Quantum conversion efficiency of the <sup>3</sup>H<sub>4</sub> level in non-modified silica fibers is much lower than that of <sup>3</sup>F<sub>4</sub> level, only about 2% and therefore most of the applications of laser transitions originating from <sup>3</sup>H<sub>4</sub> level are hindered by the lack of reliable low-phonon fiber host. We review of our contributions towards the comprehension and improvement of the spectroscopic properties of thulium ions doped into silica. We show potential of the developed thulium-doped fibers with enhanced <sup>3</sup>H<sub>4</sub> level lifetime for applications in fiber lasers around 810 nm and in fiber amplifiers for communication S-band (1460-1530 nm).","PeriodicalId":243533,"journal":{"name":"2012 IEEE 3rd International Conference on Photonics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thulium-doped silica fibers with enhanced 3H4 level lifetime for fiber lasers and amplifiers\",\"authors\":\"P. Peterka, B. Dussardier, W. Blanc, I. Kašík, P. Honzátko\",\"doi\":\"10.1109/ICP.2012.6379827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thulium-doped fibers are renowned for their applications in high power fiber lasers at around 2 μm. It is despite the low quantum conversion efficiency of <sup>3</sup>F<sub>4</sub> level in thulium doped silica fibers, which is about 10% compared to ~100% quantum conversion efficiency of the ytterbium- and erbium-doped fibers, at around 1 μm and 1.5 μm, respectively. The lower quantum conversion efficiency increases the 2 μm laser threshold but has almost no effect on the laser slope efficiency. Indeed, kW-class thulium-doped fiber lasers have been demonstrated recently. Quantum conversion efficiency of the <sup>3</sup>H<sub>4</sub> level in non-modified silica fibers is much lower than that of <sup>3</sup>F<sub>4</sub> level, only about 2% and therefore most of the applications of laser transitions originating from <sup>3</sup>H<sub>4</sub> level are hindered by the lack of reliable low-phonon fiber host. We review of our contributions towards the comprehension and improvement of the spectroscopic properties of thulium ions doped into silica. We show potential of the developed thulium-doped fibers with enhanced <sup>3</sup>H<sub>4</sub> level lifetime for applications in fiber lasers around 810 nm and in fiber amplifiers for communication S-band (1460-1530 nm).\",\"PeriodicalId\":243533,\"journal\":{\"name\":\"2012 IEEE 3rd International Conference on Photonics\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 3rd International Conference on Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICP.2012.6379827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 3rd International Conference on Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICP.2012.6379827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thulium-doped silica fibers with enhanced 3H4 level lifetime for fiber lasers and amplifiers
Thulium-doped fibers are renowned for their applications in high power fiber lasers at around 2 μm. It is despite the low quantum conversion efficiency of 3F4 level in thulium doped silica fibers, which is about 10% compared to ~100% quantum conversion efficiency of the ytterbium- and erbium-doped fibers, at around 1 μm and 1.5 μm, respectively. The lower quantum conversion efficiency increases the 2 μm laser threshold but has almost no effect on the laser slope efficiency. Indeed, kW-class thulium-doped fiber lasers have been demonstrated recently. Quantum conversion efficiency of the 3H4 level in non-modified silica fibers is much lower than that of 3F4 level, only about 2% and therefore most of the applications of laser transitions originating from 3H4 level are hindered by the lack of reliable low-phonon fiber host. We review of our contributions towards the comprehension and improvement of the spectroscopic properties of thulium ions doped into silica. We show potential of the developed thulium-doped fibers with enhanced 3H4 level lifetime for applications in fiber lasers around 810 nm and in fiber amplifiers for communication S-band (1460-1530 nm).