金属有机化学气相沉积制备多晶CdS薄膜

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654143

H. Uda, T. Fujii, S. Ikegami, H. Sonomura

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引用次数: 2

摘要

以二甲基镉和二乙基硫化物为原料，采用金属有机化学气相沉积方法在硼硅酸盐玻璃衬底上沉积了多晶CdS薄膜。CdS薄膜的生长发生在280 ~ 350℃/spl的衬底温度范围内。沉积速率随VI/II摩尔比的增加而增加，在基体温度为300-350/spl℃时，沉积速率在VI/II摩尔比为4时达到最大值。在300/spl度/C的温度下制备了具有低电阻率和高透光率的CdS薄膜，其VI/II摩尔比在1 ~ 4范围内。MOCVD沉积的CdS薄膜可作为CdS/CdTe太阳能电池的窗口层。

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Polycrystalline CdS thin film prepared by metalorganic chemical vapor deposition

Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350/spl deg/C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350/spl deg/C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300/spl deg/C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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