相变存储阵列中异常细胞的电特性

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346906

D. Mantegazza, D. Ielmini, A. Pirovano, B. Gleixner, A. Lacaita, E. Varesi, F. Pellizzer, R. Bez

{"title":"相变存储阵列中异常细胞的电特性","authors":"D. Mantegazza, D. Ielmini, A. Pirovano, B. Gleixner, A. Lacaita, E. Varesi, F. Pellizzer, R. Bez","doi":"10.1109/IEDM.2006.346906","DOIUrl":null,"url":null,"abstract":"In order to integrate phase change memory (PCM) devices into large and yielding arrays, a programming window between the two memory logic states must exist with a probability of error less than 10-9 (1 PPB). Understanding and removing the mechanisms of cell failure during the programming operation is therefore required for this technology to be viable. This paper discusses new methodologies for PCM failure electrical characterization, discovers two potential failure mechanisms and proposes new approaches for improvements","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Electrical characterization of anomalous cells in phase change memory arrays\",\"authors\":\"D. Mantegazza, D. Ielmini, A. Pirovano, B. Gleixner, A. Lacaita, E. Varesi, F. Pellizzer, R. Bez\",\"doi\":\"10.1109/IEDM.2006.346906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to integrate phase change memory (PCM) devices into large and yielding arrays, a programming window between the two memory logic states must exist with a probability of error less than 10-9 (1 PPB). Understanding and removing the mechanisms of cell failure during the programming operation is therefore required for this technology to be viable. This paper discusses new methodologies for PCM failure electrical characterization, discovers two potential failure mechanisms and proposes new approaches for improvements\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346906\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

为了将相变存储器(PCM)器件集成到大型阵列中，两种存储逻辑状态之间必须存在一个编程窗口，且错误概率小于10-9 (1 PPB)。因此，要使该技术可行，就需要了解和消除编程操作过程中细胞失效的机制。本文讨论了PCM失效电表征的新方法，发现了两种潜在的失效机制，并提出了改进的新方法

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Electrical characterization of anomalous cells in phase change memory arrays

In order to integrate phase change memory (PCM) devices into large and yielding arrays, a programming window between the two memory logic states must exist with a probability of error less than 10-9 (1 PPB). Understanding and removing the mechanisms of cell failure during the programming operation is therefore required for this technology to be viable. This paper discusses new methodologies for PCM failure electrical characterization, discovers two potential failure mechanisms and proposes new approaches for improvements

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来源期刊

2006 International Electron Devices Meeting

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