{"title":"用MOD工艺制备的铁电0.2PZN-0.8PZT(53/47)厚膜","authors":"Xiyun He, Xinsen Zheng, P. Qiu, W. Cheng, A. Ding","doi":"10.1109/ISAF.2006.4387899","DOIUrl":null,"url":null,"abstract":"Crack free peroviskite 0.2PZN-0.8PZT (53/47) thick films up to 6.8 mum were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT (53/47) thick film promises a good application in the microelectronic devices.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Relaxor Ferroelectric 0.2PZN-0.8PZT(53/47) Thick Films Fabricated Using a MOD Process\",\"authors\":\"Xiyun He, Xinsen Zheng, P. Qiu, W. Cheng, A. Ding\",\"doi\":\"10.1109/ISAF.2006.4387899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Crack free peroviskite 0.2PZN-0.8PZT (53/47) thick films up to 6.8 mum were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT (53/47) thick film promises a good application in the microelectronic devices.\",\"PeriodicalId\":441219,\"journal\":{\"name\":\"2006 15th ieee international symposium on the applications of ferroelectrics\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 15th ieee international symposium on the applications of ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2006.4387899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 15th ieee international symposium on the applications of ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2006.4387899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relaxor Ferroelectric 0.2PZN-0.8PZT(53/47) Thick Films Fabricated Using a MOD Process
Crack free peroviskite 0.2PZN-0.8PZT (53/47) thick films up to 6.8 mum were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT (53/47) thick film promises a good application in the microelectronic devices.
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