基于DRAM/ pcm的混合存储器的有效模拟:正在进行中

Peiquan Jin, Xiaoliang Wang, Dezhi Zhang, Lihua Yue
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引用次数: 0

摘要

相变存储器(Phase Change Memory, PCM)作为一种新型的非易失性存储器受到了学术界和工业界的广泛关注。虽然PCM有许多新特性,但如何在内存层次结构中使用PCM仍然是一个问题。此外,目前PCM芯片和存储设备都不可用。这使得评估pcm相关算法变得困难。因此,我们设计了一个名为DPHSim的灵活模拟器,为pcm相关研究提供了一个测试平台。DPHSim可以在DRAM和PCM上模拟各种配置。此外,它利用基于时钟的时序模型来模拟PCM的特性,并为用户提供用户友好的api来模拟内存层次结构和评估DPHSim上的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effective simulation of DRAM/PCM-based hybrid memory: work-in-progress
PCM (Phase Change Memory) as a new kind of non-volatile memory has received much attention from both academia and industry. While PCM has a number of new features, how to use PCM at memory hierarchy still remains a problem. In addition, at present PCM chips and storage devices are not available. This makes it hard to evaluate PCM-related algorithms. Thus, we design a flexible simulator named DPHSim to provide a test bed for PCM-related studies. DPHSim can simulate various configurations on DRAM and PCM. In addition, it utilizes a clock-based timing model to simulate the characteristics of PCM and offers user-friendly APIs for users to simulate memory hierarchy and evaluate performance on DPHSim.
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