复合qw对EAM线性度的改善

Y. Kang, Jiyoun Lim, Sung-Bock Kim, Jeha Kim
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引用次数: 2

摘要

提出了一种改善多量子阱(MQW)电吸收调制器(EAM)线性特性的新结构。得到了由8 nm、9 nm和10 nm组成的量子阱(QW)的传递函数,并对其组合传递函数进行了研究。我们发现,12 nm: 8 nm = 1:3的复合量子阱的IMD3比单量子阱抑制了约20 dBc。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of linearity in EAM by composite QWs
We propose a novel structure that improves the linear characteristic of a multiple quantum well (MQW) electro-absorption modulator (EAM). The transfer functions of EAMs composed of 8 nm, 9 nm and 10 nm quantum well (QW) were obtained and the combined transfer functions were investigated We found that the IMD3 of composite-type QW in which 12 nm : 8 nm = 1 : 3 was suppressed about 20 dBc compared with single-type QW.
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