InGaN/GaN微型led的载流子动力学:一种理解效率问题的射频方法

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, D. Feezell
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引用次数: 0

摘要

我们利用速率方程方法和射频测量技术来研究InGaN/GaN led的载流子动力学。载流子动力学的研究有助于理解效率挑战和设计用于可见光通信和微型led显示应用的高速、高效微型led。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Carrier Dynamics in InGaN/GaN Micro-LEDs: An RF Appraoch to Understand Efficiency Issues
We utilize a rate equation approach and RF measurement technique to study carrier dynamics in InGaN/GaN LEDs. Study of carrier dynamics aids in understanding efficiency challenges and design of high-speed, efficient micro-LEDs for visible-light communication and micro-LED display applications.
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