M. Krcmar, N. Noether, B. Heinemann, F. Korndorfer, J. Hoffmann, G. Boeck
{"title":"用于毫米波应用的SiGe HBT宽带放大器","authors":"M. Krcmar, N. Noether, B. Heinemann, F. Korndorfer, J. Hoffmann, G. Boeck","doi":"10.1109/MIKON.2006.4345366","DOIUrl":null,"url":null,"abstract":"A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.","PeriodicalId":315003,"journal":{"name":"2006 International Conference on Microwaves, Radar & Wireless Communications","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SiGe HBT Wideband Amplifier for Millimetre Wave Applications\",\"authors\":\"M. Krcmar, N. Noether, B. Heinemann, F. Korndorfer, J. Hoffmann, G. Boeck\",\"doi\":\"10.1109/MIKON.2006.4345366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.\",\"PeriodicalId\":315003,\"journal\":{\"name\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2006.4345366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microwaves, Radar & Wireless Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2006.4345366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiGe HBT Wideband Amplifier for Millimetre Wave Applications
A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
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