蓝宝石衬底InGaN/GaN MQWs蓝色发光二极管的制备与表征

2013 International Conference on Microwave and Photonics (ICMAP) Pub Date : 2013-12-01 DOI:10.1109/ICMAP.2013.6733523

Kuldip Singh, Ashok Chauhan, S. Joshi, A. Sharma, Pawan Kumar, S. Singh, P. Prajapati, B. Kushwaha, Subodh Johri, C. Dhanavantri, M. K. Rana, M. Chouhan

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引用次数: 0

摘要

在本文中，我们报道了在c-平面蓝宝石衬底上成功制造和表征了基于InGaN/GaN mqw的蓝色led。采用金属-有机-化学气相沉积(MOCVD)系统生长蓝光led外延材料。在c平面蓝宝石衬底上制备的InGaN/GaN MQWs蓝色LED的阈值电压为~ 3.1 V。

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Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.

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2013 International Conference on Microwave and Photonics (ICMAP)

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