半导体表面太赫兹辐射的增强

M. Johnston, A. Dowd, D. Whittaker, A. Corchia, A. Davies, E. Linfield
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引用次数: 1

摘要

我们研究了从半导体表面产生太赫兹(THz)辐射相干脉冲的实验和使用蒙特卡罗载流子动力学模拟。从表面场太赫兹发射器观察到准直太赫兹光束,并演示了三种提高这些发射器效率的方法:(i)通过施加磁场,(ii)通过降低器件的有效折射率和(iii)通过改变器件的几何形状。在基于棱镜的GaAs/InAs太赫兹发射器中可以看到21/spl倍/的增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancement of THz emission from semiconductor surfaces
We have studied the generation of coherent pulses of terahertz (THz) radiation from semiconductor surfaces both experimentally and using a Monte-Carlo carrier dynamics simulation. Collimated THz beams are observed from surface-field THz emitters and three methods of improving the efficiency of these emitters are demonstrated: (i) by applying a magnetic field, (ii) by reducing the effective refractive index of the device and (iii) by altering the geometry of the device. An enhancement of 21/spl times/ is seen in a prism based GaAs/InAs THz emitter.
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