在BJT电阻表征的反激法中包含衬底效应

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766242

D. MacSweeney, K. McCarthy, A. Mathewson, J. A. Power, S. C. Kelly

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引用次数: 4

摘要

本文研究了基片相互作用对测量BJT器件发射极电阻的影响，该方法通常用于测量BJT器件的发射极电阻。通过将结构考虑为两个器件的组合，可以更好地理解不同衬底配置的测量条件，从而提高了对该方法的信心。

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Inclusion of substrate effects in the flyback method for BJT resistance characterisation

In this paper, the effect of the substrate interaction is examined for the R/sub E/ flyback method which is commonly used to measure the emitter resistance of BJT devices. By considering the structure to be a combination of two devices, the measurement conditions can be understood better for different substrate configurations, giving improved confidence in the method.

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来源期刊

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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