M. Pulvirenti, A. Sciacca, L. Salvo, M. Nania, G. Scelba, G. Scarcella
{"title":"SiC MOSFET半桥变换器的体二极管反向恢复效应","authors":"M. Pulvirenti, A. Sciacca, L. Salvo, M. Nania, G. Scelba, G. Scarcella","doi":"10.1109/ECCE44975.2020.9236330","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are subjected when they are operated in extreme conditions. Results highlight how reverse recovery process can be significantly affected by the operating conditions, in terms of current slopes and temperature.","PeriodicalId":433712,"journal":{"name":"2020 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters\",\"authors\":\"M. Pulvirenti, A. Sciacca, L. Salvo, M. Nania, G. Scelba, G. Scarcella\",\"doi\":\"10.1109/ECCE44975.2020.9236330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are subjected when they are operated in extreme conditions. Results highlight how reverse recovery process can be significantly affected by the operating conditions, in terms of current slopes and temperature.\",\"PeriodicalId\":433712,\"journal\":{\"name\":\"2020 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"volume\":\"183 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCE44975.2020.9236330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Energy Conversion Congress and Exposition (ECCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE44975.2020.9236330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
本文的目的是评估SiC MOSFET体二极管反向恢复对器件开关速度限制的影响。本研究分析了由HIP 247-4L封装的1200V, 130A SiC mosfet组成的半桥变换器支腿，并进行了实验测试，评估了功率器件在极端条件下工作时所承受的电应力。结果强调了反向回收过程如何受到当前斜率和温度等操作条件的显著影响。
Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters
The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are subjected when they are operated in extreme conditions. Results highlight how reverse recovery process can be significantly affected by the operating conditions, in terms of current slopes and temperature.
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