考虑光增益和电子密度非线性的量子阱激光器的光增益模拟

2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408) Pub Date : 2000-06-05 DOI:10.1109/ICTON.2000.874161

V. Lysak, I. Sukhoivanov

{"title":"考虑光增益和电子密度非线性的量子阱激光器的光增益模拟","authors":"V. Lysak, I. Sukhoivanov","doi":"10.1109/ICTON.2000.874161","DOIUrl":null,"url":null,"abstract":"The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.","PeriodicalId":314041,"journal":{"name":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities\",\"authors\":\"V. Lysak, I. Sukhoivanov\",\"doi\":\"10.1109/ICTON.2000.874161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.\",\"PeriodicalId\":314041,\"journal\":{\"name\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2000.874161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2000.874161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

分析了电子浓度对半导体激光器光学增益的影响。利用积分增益模型和逼近模型对50 ~ 1000 /spl的有源层厚度变化范围进行了比较。确定了近似模型参数随活动层厚度变化的表达式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities

The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)

自引率

0.00%

发文量