{"title":"(Ca,Sr)Bi2Ta2O9金属/铁电/绝缘体/半导体场效应管铁电特性的精确理解","authors":"Mitsue Takahashi, Wei Zhang, S. Sakai","doi":"10.1109/ISAF.2017.8000220","DOIUrl":null,"url":null,"abstract":"An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N<inf>2</inf>-dominant-gas annealing process was effective for improving the ferroelectricity of the Ca<inf>x</inf>Sr<inf>1−x</inf>Bi<inf>2</inf>Ta<inf>2</inf>O<inf>9</inf> (CSBT) in Ir/CSBT/HfO<inf>2</inf>/Si FETs.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Precise understanding of ferroelectric properties in metal/ferroelectric/insulator/semiconductor FETs with (Ca,Sr)Bi2Ta2O9\",\"authors\":\"Mitsue Takahashi, Wei Zhang, S. Sakai\",\"doi\":\"10.1109/ISAF.2017.8000220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N<inf>2</inf>-dominant-gas annealing process was effective for improving the ferroelectricity of the Ca<inf>x</inf>Sr<inf>1−x</inf>Bi<inf>2</inf>Ta<inf>2</inf>O<inf>9</inf> (CSBT) in Ir/CSBT/HfO<inf>2</inf>/Si FETs.\",\"PeriodicalId\":421889,\"journal\":{\"name\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2017.8000220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precise understanding of ferroelectric properties in metal/ferroelectric/insulator/semiconductor FETs with (Ca,Sr)Bi2Ta2O9
An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity of the CaxSr1−xBi2Ta2O9 (CSBT) in Ir/CSBT/HfO2/Si FETs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
