{"title":"基于GaN/量子点/GaN系统的晶圆键合技术","authors":"Ying Li, E. Stokes","doi":"10.1109/SECON.2010.5453884","DOIUrl":null,"url":null,"abstract":"Integration of colloidal semiconductor quantum dots with epitaxial semiconductor materials offers the possibility of a wide variety of new device structures. In this work, wafer bonding processes for layered GaN/Quantum Dots/GaN structures are described. Bonding is achieved by thermal reorganization of bidentate ligand thiophenethiol which initially caps the CdSe/ZnS core/shell quantum dots. Annealing temperature dependent bond strength feature is characterized. Maximum bond strength is achieved after annealing at 350°C. Effect of annealing on quantum dot photoluminescence is also investigated.","PeriodicalId":286940,"journal":{"name":"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wafer bonding technique based GaN/Quantum Dots/GaN system\",\"authors\":\"Ying Li, E. Stokes\",\"doi\":\"10.1109/SECON.2010.5453884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integration of colloidal semiconductor quantum dots with epitaxial semiconductor materials offers the possibility of a wide variety of new device structures. In this work, wafer bonding processes for layered GaN/Quantum Dots/GaN structures are described. Bonding is achieved by thermal reorganization of bidentate ligand thiophenethiol which initially caps the CdSe/ZnS core/shell quantum dots. Annealing temperature dependent bond strength feature is characterized. Maximum bond strength is achieved after annealing at 350°C. Effect of annealing on quantum dot photoluminescence is also investigated.\",\"PeriodicalId\":286940,\"journal\":{\"name\":\"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.2010.5453884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.2010.5453884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer bonding technique based GaN/Quantum Dots/GaN system
Integration of colloidal semiconductor quantum dots with epitaxial semiconductor materials offers the possibility of a wide variety of new device structures. In this work, wafer bonding processes for layered GaN/Quantum Dots/GaN structures are described. Bonding is achieved by thermal reorganization of bidentate ligand thiophenethiol which initially caps the CdSe/ZnS core/shell quantum dots. Annealing temperature dependent bond strength feature is characterized. Maximum bond strength is achieved after annealing at 350°C. Effect of annealing on quantum dot photoluminescence is also investigated.
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