40nm In0.7GaAs hemt,新型HSQ t栅工艺

Sungwon Kim, Gyungseon Seol, Jin-churl Her, Kyung-Chul Jang, K. Seo
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引用次数: 0

摘要

我们已经成功地演示了新的基于HSQ的t栅工艺,将负纳米级模式转移到正纳米级模式。该工艺是基于电子束(EB)光刻,O2等离子体和BOE溶液刻蚀。由于O2等离子体刻蚀在HSQ和ZEP之间具有很高的选择性,因此在ZEP层上暴露HSQ图案而没有图案尺寸的损失。然后用BOE溶液选择性蚀刻HSQ。因此,这是一个非常简单和可重复的过程,可用于制造纳米级t栅极hemt。采用基于HSQ的t栅工艺制备的40 nm In0.7GaAs hemt具有1.4 S/mm的外部跨导gm和370 GHz的截止频率fT
本文章由计算机程序翻译,如有差异,请以英文原文为准。
40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process
We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O2 plasma and BOE solution etching. Because O2 plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without any loss of pattern dimension. HSQ was then selectively etched by BOE solution. Therefore it is very simple and reproducible process in achieving nanoscale pattern of positive tone and could be useful for the fabrication of nanoscale T-gate HEMTs. The fabricated 40 nm In0.7GaAs HEMTs with the novel HSQ based T-gate process exhibit an extrinsic transconductance gm of 1.4 S/mm and a cut-off frequency fT of 370 GHz
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