n沟道体finfet从直流到高频的特性与建模

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126567

Ramendra Singh, P. Kushwaha, Sudip Ghosh, B. Parvais, Y. Chauhan, A. Dixit

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引用次数: 3

摘要

RF CMOS技术为在单芯片上生产模拟、数字和RF电路提供了一个平台，以实现未来的高水平集成。这促进了对RF finfet的强大紧凑模型的需求，以便以精确和方便的方式研究电路。在本文中，我们通过执行双端口s参数测量来表征14nm n通道体finfet。此外，采用通用多栅极器件的BSIM-CMG模型来准确捕获器件的射频行为。

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Characterization and modeling of N-channel bulk FinFETs from DC to high frequency

RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG model for common multiple gate devices is used to accurately capture the RF behavior of the device.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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