一种用于植入式医疗设备的8pW无噪声干扰双输出电压基准

Yang Liu, Jianghong Ma, Guangqian Zhu, Kang Liu
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引用次数: 0

摘要

本文提出了一种用于植入式医疗器械(IMDs)的新型皮瓦双输出电压基准。在imd中,出色的抑制电源噪声的能力以及低功耗和小有源面积的工作对电压参考至关重要。在本设计中,通过两组2-晶体管(2-T)结构和一个共享的4位微调电路产生双输出参考电压,以减少工艺变化的影响。在典型的拐角处,本文电路产生的参考电压Vref1和Vref2分别约为88mV和228mV,在0℃~ 120℃范围内电压差分别为0.576mv和6.546mV,仿真得到的噪声抑制比大于35dB,说明Vref2具有较强的抑制Vref1噪声的能力。因此,产生了两个隔离噪声的参考电压,为有噪声和无噪声的功能电路提供了精确和无干扰的参考电压。此外,室温下的功耗仅为8.52 pW,有源面积仅为0.0019 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 8pW Noise Interference-Free Dual-Output Voltage Reference for Implantable Medical Devices
This paper presents a novel pico-watt dual-output voltage reference for implantable medical devices (IMDs). In IMDs, excellent capabilities to reject the noise from power source and work with low power consumption and small active area are critical for voltage references. In the proposed design, a dual-output reference voltage is generated through two sets of 2-transistor (2-T) structure and a shared 4-bit trimming circuit to reduce the effects of process variations. At a typical corner, the proposed circuit generates two reference voltages Vref1 and Vref2 of about 88mV and 228mV and the voltage difference is 0.756mV and 6.546mV respectively from 0 °C to 120 °C, The noise rejection ratio greater than 35dB achieved in the simulation shows that Vref2 has a strong ability to suppress the noise of Vref1. Therefore, two noise-isolated reference voltages are generated, providing accurate and interference-free reference voltages for noisy and noiseless functional circuits. Furthermore, the power consumption is only 8.52 pW at room temperature and the active area is only 0.0019 mm2.
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