先进的氮化镓高频功率放大器

2013 IEEE Wireless Power Transfer (WPT) Pub Date : 2013-05-15 DOI:10.1109/WPT.2013.6556874

V. Camarchia, E. Cipriani, P. Colantonio, G. Ghione, F. Giannini, M. Pirola, R. Quaglia

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引用次数: 2

摘要

本文讨论了GaN HEMT技术在窄带和宽带高效功率放大器设计中的优势。一方面，由于GaN器件的高击穿电压，我们专注于应用二次谐波调谐技术而不会降低功率性能的可能性。另一方面，我们讨论了氮化镓器件的高功率密度和随之而来的尺寸减小对宽带功率放大器设计的影响。给出了三个设计示例，以执行给定的注意事项。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced GaN-based high frequency power amplifiers

In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wideband high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.

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2013 IEEE Wireless Power Transfer (WPT)

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