Si: HfO2基mfi - fet记忆窗口变化的研究

2016 International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE) Pub Date : 2016-09-01 DOI:10.1109/ICMETE.2016.98

R. Sharma, Ashutosh Nandi

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引用次数: 0

摘要

本文用不同氧化物厚度的双栅MOSFET研究了掺硅氧化铪的铁电行为。研究了栅极电压从-1.5V到2.0V和2.0V到-1.5V时漏极电流的变化，并与传统的双栅MOSFET进行了比较。本文主要研究了硅掺杂氧化铪的极化行为，并得出了随着氧化铪厚度的变化，记忆窗口增大的结果，这对制备FRAM更有帮助。使用Sentaurus TCAD观察栅极电压从-1 V到2 V变化时，记忆窗的变化高达0.80 mV。

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Study of Variations in Memory Window of Si: HfO2 Based MFIS-FET

This paper has been dealt with ferroelectric behavior of silicon doped hafnium oxide using double gate MOSFET with different oxide thickness. The Variation in the drain cuurent with the gate voltage from -1.5V to 2.0V and 2.0V to -1.5V has been studied and these variations also compared with the conventional double gate MOSFET. The study mainly concentrates on the polarization behavior of silicon doped hafnium oxide and concludes to a result of increase in the memory window with the variation in the oxide thickness which is more helpful in making FRAM. Sentaurus TCAD is used to observe the memory window variations up to 0.80 mV with the gate voltage variation from -1 V to 2 V.

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2016 International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE)

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