利用突发性和高掺杂砷埋没涂层的硼向外扩散的CV掺杂分析

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193176

C. Ortiz, L. Nanver, W. van Noort, Tlm Scholtes, J. Slotboom

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引用次数: 6

摘要

作为一种快速、非破坏性的测量技术，利用CV测量来测量掺杂剂的电活性杂质分布一直很受欢迎。在这项工作中，提出了一个n/sup -/p/sup -/n/sup +/或ip/sup -/n/sup +/结构，用于掺杂硼区尾部延伸到轻掺杂顶层的cv掺杂分析。通过实验和模拟证明了该方法在Si和Si/sub - 1-x/Ge/sub -x/中评价硼瞬态增强扩散(TED)效应的有效性。

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CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer

The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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