{"title":"基于抗辐射ABMC«Integral»的bifet技术电压模拟乘法器","authors":"N. Prokopenko, A. I. Serebryakov, D. N. Konev","doi":"10.1109/SIBCON.2009.5044864","DOIUrl":null,"url":null,"abstract":"Architecture of the advanced voltage analog multipliers on the basis of radiation-resistant ABMC «Integral» (analogue base matrix crystal) is proposed and discussed.","PeriodicalId":164545,"journal":{"name":"2009 International Siberian Conference on Control and Communications","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"The BiFET-technology voltage analog multipliers based on the radiation resistant ABMC «Integral»\",\"authors\":\"N. Prokopenko, A. I. Serebryakov, D. N. Konev\",\"doi\":\"10.1109/SIBCON.2009.5044864\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Architecture of the advanced voltage analog multipliers on the basis of radiation-resistant ABMC «Integral» (analogue base matrix crystal) is proposed and discussed.\",\"PeriodicalId\":164545,\"journal\":{\"name\":\"2009 International Siberian Conference on Control and Communications\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2009.5044864\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2009.5044864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The BiFET-technology voltage analog multipliers based on the radiation resistant ABMC «Integral»
Architecture of the advanced voltage analog multipliers on the basis of radiation-resistant ABMC «Integral» (analogue base matrix crystal) is proposed and discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
