数字/模拟双金属梯度通道负电容无结场效应管的性能评价

2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) Pub Date : 2021-12-01 DOI:10.1109/iSES52644.2021.00042

S. Chaudhary, B. Dewan, Chitrakant Sahu, M. Yadav

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引用次数: 0

摘要

本文研究了负电容对双金属双栅梯度沟道无结晶体管(DMGC-JLT)的影响。将双金属梯度通道效应与NCFET相结合，与DMGC-JLT相比，研究了离子/离合、SS、跨导、跨导产生因子和输出电导。利用Silvaco ATLAS工具和MATLAB进行仿真。利用MATLAB工具求解一维L-K方程。分析了通道中铁电厚度和掺杂的变化。仿真结果表明，该方法具有较好的离子/离合度、较低的信噪比、较好的跨导性以及其他性能的改善，有利于数字和模拟应用。未掺杂的${HfO}_{2}$作为铁电材料用于诱导基线器件的负电容效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Assessment of Dual Metal Graded Channel Negative Capacitance Junctionless FET for Digital/Analog field

This work focuses on effect of negative capacitance on the Dual Metal Double Gate Graded Channel Junction Less Transistor(DMGC-JLT). The effect of dual metal with graded channel is combined with NCFET to study Ion/Ioff, SS, transconductance, transconductance generation factor and output conductance in comparison to DMGC-JLT. Simulation was carried out using Silvaco ATLAS tool and MATLAB. MATLAB tool is used to solve the 1-D L-K equation. Analyses of the variation in ferroelctric thickness and doping in channel is also performed. The simulation results showed better Ion/Ioff, lower SS, better transconductance and improvement in other factors which is beneficial for both digital and analog applications. Undoped ${HfO}_{2}$ is used as Ferro-electric Material for inducing the negative capacitance effect in baseline device.

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来源期刊

2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)

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