H. Brech, W. Brakensiek, D. Burdeaux, W. Burger, C. Dragon, G. Formicone, B. Pryor, D. Rice
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引用次数: 40
摘要
演示了摩托罗拉下一代HV6大功率RF- ldmos晶体管的射频性能改进。在2.1 GHz频段，使用双载波WCDMA信号，在-37 dBc IM3和20 W输出功率下实现29%的漏极效率，以及超过16.5 dB的高功率增益。据我们所知，这是在该频段内任何技术或材料系统的高功率部分报道的效率和线性度的最高组合。在100 W (P/sub 3dB/)下，PAE也达到62%。
Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations
Improved RF performance of Motorola's next generation HV6 high power RF-LDMOS transistor is demonstrated. In the 2.1 GHz band, with a two-carrier WCDMA signal, a 29% drain efficiency is achieved at -37 dBc IM3 and 20 W of output power, along with a high power gain of over 16.5 dB. To our knowledge, this is the highest combination of efficiency and linearity ever reported on a high power part of any technology or material system in that frequency band. A PAE of 62% at 100 W (P/sub 3dB/) is also achieved.
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