hemt内禀小信号参数分析

Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109) Pub Date : 1998-02-24 DOI:10.1109/NRSC.1998.711504

M. Abdel Aziz, M. E. Banna, M. Elsayed

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引用次数: 0

摘要

建立了一个基于单一解析函数的电荷控制模型，该函数描述了hemt中三种电荷对栅极电压的依赖关系。这些电荷包括:2DEG, AlGaAs自由电子和中和供体。推导了固有小信号模型参数在线性和饱和区域的封闭表达式。在不同的栅极和漏极偏置电压下，研究了早期模型中通常忽略的AlGaAs和中和供体电荷的贡献。

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Analysis of intrinsic small signal parameters in HEMTs

A charge control model was developed which is based on a single analytical function that describes the dependence of the three charges in HEMTs on gate voltage. These charges include: 2DEG, AlGaAs free electrons and neutralized donors. Closed form expressions for the intrinsic small signal model parameters in linear and saturation regions were derived. The contributions of both the AlGaAs and neutralized donor charges, which were commonly ignored in early models, were studied at different gate and drain bias voltages.

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Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109)

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