ICP-PECVD - SiN应力源层工艺诱导Ge在Si纳米柱上的拉伸应变

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6961941

R. Millar, K. Gallacher, A. Samarelli, D. Dumas, J. Frigerio, D. Chrastina, G. Isella, Douglas J. Paul

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引用次数: 2

摘要

采用电感耦合等离子体增强化学气相沉积法沉积氮化硅应力源层，提高了锗纳米柱的发射波长。这些应力源比其他技术沉积的氮化硅含有更少的氢，因此在靠近电信波长或中红外波段的应变设备中应该提供更低的光学损耗。

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Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers

Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.

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11th International Conference on Group IV Photonics (GFP)

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