光学照明对phemt击穿特性的影响

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003. Pub Date : 2003-09-10 DOI:10.1109/MWP.2003.1422894

N. Bourhill, S. Iezekiel, D. Steenson

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引用次数: 1

摘要

本文首次研究了光学照明对phemt击穿特性的影响。当V/sub DS/ > 2V时，光照会影响phemt中与深电平阱相关的电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The impact of optical illumination on the breakdown characteristics of pHEMTs

The impact of optical illumination on the breakdown characteristics of pHEMTs is investigated for the first time. Illumination is found to influence deep-level trap related currents in the pHEMTs under test when V/sub DS/ > 2V.

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MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.

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