绝缘体上硅mosfet中发射极效率对单晶体管锁存的影响

1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI:10.1109/SOSSOI.1990.145751

L. Mcdaid, S. Hall, W. Eccleston, P. Watkinson, J. Alderman

{"title":"绝缘体上硅mosfet中发射极效率对单晶体管锁存的影响","authors":"L. Mcdaid, S. Hall, W. Eccleston, P. Watkinson, J. Alderman","doi":"10.1109/SOSSOI.1990.145751","DOIUrl":null,"url":null,"abstract":"It is demonstrated that a significant improvement in the breakdown voltage of an SOI (silicon-on-insulator) MOSFET can be achieved by stress-induced damage to the source/body junction. The damage serves to degrade the injection efficiency of this junction and thus suppresses the parasitic lateral bipolar associated with source/body/drain. The experiment indicates the usefulness of source engineering to the latch problem.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs\",\"authors\":\"L. Mcdaid, S. Hall, W. Eccleston, P. Watkinson, J. Alderman\",\"doi\":\"10.1109/SOSSOI.1990.145751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is demonstrated that a significant improvement in the breakdown voltage of an SOI (silicon-on-insulator) MOSFET can be achieved by stress-induced damage to the source/body junction. The damage serves to degrade the injection efficiency of this junction and thus suppresses the parasitic lateral bipolar associated with source/body/drain. The experiment indicates the usefulness of source engineering to the latch problem.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究表明，通过对源/体结的应力诱导损伤，可以显著提高SOI(绝缘体上硅)MOSFET的击穿电压。这种损伤降低了该结的注入效率，从而抑制了与源/体/漏相关的寄生侧双极。实验表明了源工程对锁存问题的有效性

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The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs

It is demonstrated that a significant improvement in the breakdown voltage of an SOI (silicon-on-insulator) MOSFET can be achieved by stress-induced damage to the source/body junction. The damage serves to degrade the injection efficiency of this junction and thus suppresses the parasitic lateral bipolar associated with source/body/drain. The experiment indicates the usefulness of source engineering to the latch problem.<>

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1990 IEEE SOS/SOI Technology Conference. Proceedings

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