片上斜坡发生器用于单斜坡前视斜坡(SSLAR) ADC

S. Balagopal, S. Ay
{"title":"片上斜坡发生器用于单斜坡前视斜坡(SSLAR) ADC","authors":"S. Balagopal, S. Ay","doi":"10.1109/MWSCAS.2009.5236076","DOIUrl":null,"url":null,"abstract":"An on-chip ramp generator was developed for single-slope look-ahead ramp (SSLAR) analog-to-digital converter (ADC) integrated in a column-parallel CMOS image sensor. Ramp generator is the central part of a new ADC algorithm which uses modified single-slope ramp (SSR) ADC timing. Ramp block designed such a way that it allows wide output voltage ranges as well as code hopping, code fall back and look-ahead operations in column-parallel ramp ADC. Ramp generator was fabricated using 0.5µm, 2P3M CMOS technology. Ramp generator composes of 10-bit synchronous counter, switched-capacitor based voltage steering circuits, output buffer and logic circuits. Effective layout area of ramp generator is 0.3mm2.","PeriodicalId":254577,"journal":{"name":"2009 52nd IEEE International Midwest Symposium on Circuits and Systems","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"An on-chip ramp generator for single-slope look ahead ramp (SSLAR) ADC\",\"authors\":\"S. Balagopal, S. Ay\",\"doi\":\"10.1109/MWSCAS.2009.5236076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An on-chip ramp generator was developed for single-slope look-ahead ramp (SSLAR) analog-to-digital converter (ADC) integrated in a column-parallel CMOS image sensor. Ramp generator is the central part of a new ADC algorithm which uses modified single-slope ramp (SSR) ADC timing. Ramp block designed such a way that it allows wide output voltage ranges as well as code hopping, code fall back and look-ahead operations in column-parallel ramp ADC. Ramp generator was fabricated using 0.5µm, 2P3M CMOS technology. Ramp generator composes of 10-bit synchronous counter, switched-capacitor based voltage steering circuits, output buffer and logic circuits. Effective layout area of ramp generator is 0.3mm2.\",\"PeriodicalId\":254577,\"journal\":{\"name\":\"2009 52nd IEEE International Midwest Symposium on Circuits and Systems\",\"volume\":\"173 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 52nd IEEE International Midwest Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2009.5236076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 52nd IEEE International Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2009.5236076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

针对集成在列并行CMOS图像传感器中的单斜率前视斜坡(SSLAR)模数转换器(ADC),研制了一种片上斜坡发生器。斜坡发生器是一种新的ADC算法的核心部分,该算法采用改进的单斜坡(SSR) ADC时序。坡道模块的设计使得它可以在列并行坡道ADC中实现宽输出电压范围以及代码跳变、代码回落和前视操作。坡道发生器采用0.5µm, 2P3M CMOS技术制造。匝道发生器由10位同步计数器、基于开关电容的电压转向电路、输出缓冲器和逻辑电路组成。坡道发生器有效布局面积0.3mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An on-chip ramp generator for single-slope look ahead ramp (SSLAR) ADC
An on-chip ramp generator was developed for single-slope look-ahead ramp (SSLAR) analog-to-digital converter (ADC) integrated in a column-parallel CMOS image sensor. Ramp generator is the central part of a new ADC algorithm which uses modified single-slope ramp (SSR) ADC timing. Ramp block designed such a way that it allows wide output voltage ranges as well as code hopping, code fall back and look-ahead operations in column-parallel ramp ADC. Ramp generator was fabricated using 0.5µm, 2P3M CMOS technology. Ramp generator composes of 10-bit synchronous counter, switched-capacitor based voltage steering circuits, output buffer and logic circuits. Effective layout area of ramp generator is 0.3mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信