编程擦除周期中SNOI器件的接口恢复

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543293

Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng

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引用次数: 0

摘要

在本文中,我们研究了在程序界面陷阱/擦除(P / E)周期。通过电荷泵送测量，将连续P/E循环状态下的电荷泵送电流(ICP)与初始状态进行了比较。在5个P/E循环内，在恒温下编程运行后，ICP减小。观察到的界面状态的恢复归因于热电子注入应力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the interface recovery of SNOI devices during programming-erasing cycles

In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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