600V反向阻断IGBT器件动态特性评估

2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE) Pub Date : 2017-11-01 DOI:10.1109/AIEEE.2017.8270527

O. Korkh, A. Blinov

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引用次数: 4

摘要

本文对RB型IGBT晶体管的工作原理进行了概述和分析。利用双脉冲测试电路，对600 V, 85 A的RB IGBT器件在硬开关和软开关条件下的特性进行了研究。评估了这些器件在各种条件下的开关行为，特别是通断特性。获得的结果可以评估反向恢复过程对导通损耗的影响，并将RB igbt与各种类型的分立二极管的特性进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dynamic characteristic evaluation of a 600V reverse blocking IGBT device

This paper presents an overview and analysis of operation of RB IGBT transistors. The series of experiments is devoted characterisation of 600 V, 85 A RB IGBT devices under hard and soft switching conditions using a double-pulse test circuit. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of reverse recovery process on the turn-on losses and compare the characteristic of RB IGBTs with various types of discrete diodes.

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来源期刊

2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)

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