一种52.5GHz-66GHz高转换增益三倍频器。\mu \text{m SiGe}$ HBT进程

Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin
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摘要

提出了一种采用$0.13\mu\ mathm {m}$ SiGe HBT工艺的52.5GHz-66GHz三倍频器,该三倍频器采用单平衡结构,转换增益高达14.3dB。测量到最大饱和输出功率$(\ mathm {P}_{\text{sat}})$至12.3dBm@57GHz, 3db带宽为13.5GHz(22.7%相对带宽)。采用折叠磁平衡器将单端信号转换为差分信号,其幅值差小于0.5dB,相位差在180°内。还采用了增益增强技术。芯片尺寸为620\mu\ mathm {m}$乘以200\mu\ mathm {m}$,不含焊盘,总共为880\mu\ mathm {m}$乘以520\mu\ mathm {m}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.
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