微隙毒气室研究

H. Cho, W. Hong, N. Palaio, J. Kadyk, K. Luk, V. Perez-mendez
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引用次数: 13

摘要

采用氢化非晶碳化硅(a- si:C:H)作为微隙气室阳极带的绝缘支撑基座,试图获得更厚的高质量绝缘层。已经建立并测试了具有2.3或4.6 /spl mu/m厚的a-Si:C:H和2.0 /spl mu/m厚的SiO/sub 2/绝缘层的MGCs。本文介绍了气体增益、放电对带钢的损伤和老化的初步研究结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microgap gas chamber studies
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 /spl mu/m thick a-Si:C:H and 2.0 /spl mu/m thick SiO/sub 2/ insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.
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