{"title":"一种补偿频率依赖行为的宽带功率放大器MMIC","authors":"Neha Bajpai, Y. Chauhan","doi":"10.1109/imarc49196.2021.9714648","DOIUrl":null,"url":null,"abstract":"We present a new approach to design a singlestage broadband power amplifier (PA) monolithic microwave integrated circuit (MMIC). The PA MMIC fabricated in $0.25\\mu\\mathrm{m}$ GaAs pHEMT process has an integrated Electro-Static-Discharge (ESD) limiter, which can tolerate up to $350\\mathrm{~V}$ Human Body Model without failure. The conventional broadband impedance matching network (BIMN) for PAs has the very well-known limitation of opposite impedance rotation. Here, we propose a new approach to reduce the problem of frequency-dependent behavior of broadband PA. The input and output BIMNs are based on a microwave band-pass filter technique using distributed elements.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Broadband Power Amplifier MMIC to Compensate the Frequency Dependent Behaviour\",\"authors\":\"Neha Bajpai, Y. Chauhan\",\"doi\":\"10.1109/imarc49196.2021.9714648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new approach to design a singlestage broadband power amplifier (PA) monolithic microwave integrated circuit (MMIC). The PA MMIC fabricated in $0.25\\\\mu\\\\mathrm{m}$ GaAs pHEMT process has an integrated Electro-Static-Discharge (ESD) limiter, which can tolerate up to $350\\\\mathrm{~V}$ Human Body Model without failure. The conventional broadband impedance matching network (BIMN) for PAs has the very well-known limitation of opposite impedance rotation. Here, we propose a new approach to reduce the problem of frequency-dependent behavior of broadband PA. The input and output BIMNs are based on a microwave band-pass filter technique using distributed elements.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband Power Amplifier MMIC to Compensate the Frequency Dependent Behaviour
We present a new approach to design a singlestage broadband power amplifier (PA) monolithic microwave integrated circuit (MMIC). The PA MMIC fabricated in $0.25\mu\mathrm{m}$ GaAs pHEMT process has an integrated Electro-Static-Discharge (ESD) limiter, which can tolerate up to $350\mathrm{~V}$ Human Body Model without failure. The conventional broadband impedance matching network (BIMN) for PAs has the very well-known limitation of opposite impedance rotation. Here, we propose a new approach to reduce the problem of frequency-dependent behavior of broadband PA. The input and output BIMNs are based on a microwave band-pass filter technique using distributed elements.