{"title":"分布式振荡器:功率砷化镓集成电路的一种解决方案","authors":"Y. Archambault","doi":"10.1109/EUMA.1979.332770","DOIUrl":null,"url":null,"abstract":"Multidiode distributed oscillators allow combining several high power GaAs Impatt diodes in a compact module. According to this principle, the diodes are strongly coupled to a low-Q resonant circuit. The modes and resonant frequencies depend heavily upon the diode reactances. The flat cavity combiner which is described involves special techniques for suppressing unwanted parasitic modes without absorbing power on the desired TM 010 mode. A four diode structure delivers 5 W around 10 GHz, with a nearly 100% power adding efficiency and a 400 MHz locking bandwidth for a 10 dB gain. At Ku band, power combining of six 2.5 W nominal GaAs diodes inside a dielectric circular cavity, is presented.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Distributed Oscillator : A Solution for Power GaAs IMPATT Combining\",\"authors\":\"Y. Archambault\",\"doi\":\"10.1109/EUMA.1979.332770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multidiode distributed oscillators allow combining several high power GaAs Impatt diodes in a compact module. According to this principle, the diodes are strongly coupled to a low-Q resonant circuit. The modes and resonant frequencies depend heavily upon the diode reactances. The flat cavity combiner which is described involves special techniques for suppressing unwanted parasitic modes without absorbing power on the desired TM 010 mode. A four diode structure delivers 5 W around 10 GHz, with a nearly 100% power adding efficiency and a 400 MHz locking bandwidth for a 10 dB gain. At Ku band, power combining of six 2.5 W nominal GaAs diodes inside a dielectric circular cavity, is presented.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Distributed Oscillator : A Solution for Power GaAs IMPATT Combining
Multidiode distributed oscillators allow combining several high power GaAs Impatt diodes in a compact module. According to this principle, the diodes are strongly coupled to a low-Q resonant circuit. The modes and resonant frequencies depend heavily upon the diode reactances. The flat cavity combiner which is described involves special techniques for suppressing unwanted parasitic modes without absorbing power on the desired TM 010 mode. A four diode structure delivers 5 W around 10 GHz, with a nearly 100% power adding efficiency and a 400 MHz locking bandwidth for a 10 dB gain. At Ku band, power combining of six 2.5 W nominal GaAs diodes inside a dielectric circular cavity, is presented.
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