提高3-D NAND快闪记忆体的电离辐射耐受性

2023 IEEE International Memory Workshop (IMW) Pub Date : 2023-05-01 DOI:10.1109/IMW56887.2023.10145957

B. Ray, Matchima Buddhanoy, Mondol Anik Kumar

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引用次数: 0

摘要

在本文中，我们提出了总电离剂量(TID)效应对商用3-D NAND存储器的表征结果。我们展示了TID诱导的阈值电压偏移和存储阵列的误码率。基于表征结果，我们提出了四种系统级技术，可以减轻商用3-D NAND存储器的TID效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory

In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.

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2023 IEEE International Memory Workshop (IMW)

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