Takahiro Kohara, Woonghee Lee, K. Mizobuchi, S. Sugawa
{"title":"采用柱源跟随器读出电路，具有2.5-e -随机噪声和110-ke -满井容量的CMOS图像传感器","authors":"Takahiro Kohara, Woonghee Lee, K. Mizobuchi, S. Sugawa","doi":"10.1109/ASPDAC.2010.5419869","DOIUrl":null,"url":null,"abstract":"A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e<sup>−</sup> conversion gain, 2.5-e<sup>−</sup> random noise, 110,000-e<sup>−</sup> full well capacity and 93-dB dynamic range in one exposure.","PeriodicalId":368770,"journal":{"name":"2009 Symposium on VLSI Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A CMOS image sensor with 2.5-e− random noise and 110-ke− full well capacity using column source follower readout circuits\",\"authors\":\"Takahiro Kohara, Woonghee Lee, K. Mizobuchi, S. Sugawa\",\"doi\":\"10.1109/ASPDAC.2010.5419869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e<sup>−</sup> conversion gain, 2.5-e<sup>−</sup> random noise, 110,000-e<sup>−</sup> full well capacity and 93-dB dynamic range in one exposure.\",\"PeriodicalId\":368770,\"journal\":{\"name\":\"2009 Symposium on VLSI Circuits\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.2010.5419869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2010.5419869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS image sensor with 2.5-e− random noise and 110-ke− full well capacity using column source follower readout circuits
A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e− conversion gain, 2.5-e− random noise, 110,000-e− full well capacity and 93-dB dynamic range in one exposure.
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