不同封盖成分和应变耦合层数对In0.5Ga0.5As量子点红外探测器的影响

SPIE OPTO Pub Date : 2016-03-15 DOI:10.1117/12.2209308
D. Panda, S. Shetty, A. Balgarkashi, H. Ghadi, N. Sehara, S. Chakrabarti
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引用次数: 0

摘要

本文报道了不同封盖成分的In0.5Ga0.5As点应变耦合多堆叠量子点红外探测器(qdip)的光学和电学性质。采用固体源分子束外延法制备了双层、三层、五层和七层耦合QDIPs,其中一组样品含有常规GaAs层(12nm),另一组样品含有总厚度相同的In0.15Ga0.85As层(3nm)和GaAs层(9nm)的组合盖层。整套应变耦合量子点(QDs)的基态光致发光峰与非耦合结构相比出现了红移。由于组合封顶结构中的In0.5Ga0.5As点的铟相互扩散减少,与GaAs封顶结构相比,观察到更高的红移,这归因于前者的点尺寸更大。与相应的GaAs封顶量子点相比,In0.15Ga0.85As/GaAs封顶量子点的全宽半最大值(FWHM)较低,点尺寸分布均匀。与所有结构相比,In0.15Ga0.85As/GaAs封盖的三层样品的峰值发射波长为1177nm, FWHM为15.67nm,活化能为339meV。三层样品似乎是最佳的堆叠,具有最佳的约束,在100K下测量的暗电流密度较低,为6.5E-8 A/cm2。样品在中红外~4.89μm和~7.08μm处也表现出多色响应。进一步优化间隔层厚度和点层沉积可以提高对长红外范围的响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of varying capping composition and number of strain-coupled stacks on In0.5Ga0.5As quantum dot infrared photodetectors
In this paper, we have reported the optical and electrical properties of strain coupled multi-stack quantum dot infrared photodetectors (QDIPs) of In0.5Ga0.5As dots with different capping compositions. Bilayer, trilayer, pentalayer and heptalayer coupled QDIPs are grown by solid source molecular beam epitaxy with one set of samples containing conventional GaAs capping (12nm) and second set containing a combinational capping of In0.15Ga0.85As (3nm) and GaAs (9nm) layers with same total thickness. The entire set of strain coupled quantum dots (QDs) shows a red shift in ground state photoluminescence peak in comparison to the uncoupled structures. Due to the reduction in indium interdiffusion from In0.5Ga0.5As dots in the combinational capped structures, a higher redshift is observed compared to the GaAs capped structures, which attributes larger dot size in the former ones. Full width half maximum value (FWHM) of In0.15Ga0.85As/GaAs capped QDs are lower, showing uniform distribution of dot size compared to the corresponding GaAs capped QDs. Trilayer sample with In0.15Ga0.85As/GaAs capping shows the best result in terms of the peak emission wavelength of 1177nm, FWHM of 15.67nm and activation energy of 339meV compared to all the structures. Trilayer sample seems to be the optimum stacking having the best confinement resulting lower dark current density of 6.5E-8 A/cm2 measured at 100K. The sample also shows a multicolor response at ~4.89μm and at ~7.08μm in the mid infrared range. Further optimization of the spacer thickness and dot layer deposition can improve the response towards the long infrared range.
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