{"title":"宽带低相位噪声12.4-15.4GHz CMOS压控振荡器","authors":"Jianhong Li, F. Huang, Youming Zhang","doi":"10.1109/ICCPS.2015.7454090","DOIUrl":null,"url":null,"abstract":"A Broadband Low Phase Noise 12.4-15.4GHz CMOS LCVCO is presented in this paper. Low Phase Noise is exhibited in the VCO which can realize wider tuning range. A 4-bit switched capacitor array is employed to extend the tuning range. Noise filter technology is adopted to further improve the phase noise. The measured VCO covers frequency band from 12.4GHz to 15.4GHz continuously. The measured phase noise is -119.74 dBc/Hz at 1 MHz offset from carrier frequency of 15.2 GHz and the differential output power reaches 0.66 dBm at the frequency of 15.2 GHz. The measured current dissipation of the VCO core circuit is 9.9 mA. The VCO is fabricated in 0.13 m CMOS process from a 1.2V supply. The total area of layout is 0.56×0.84 mm2.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Broadband Low Phase Noise 12.4–15.4GHz CMOS voltage controlled oscillator\",\"authors\":\"Jianhong Li, F. Huang, Youming Zhang\",\"doi\":\"10.1109/ICCPS.2015.7454090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Broadband Low Phase Noise 12.4-15.4GHz CMOS LCVCO is presented in this paper. Low Phase Noise is exhibited in the VCO which can realize wider tuning range. A 4-bit switched capacitor array is employed to extend the tuning range. Noise filter technology is adopted to further improve the phase noise. The measured VCO covers frequency band from 12.4GHz to 15.4GHz continuously. The measured phase noise is -119.74 dBc/Hz at 1 MHz offset from carrier frequency of 15.2 GHz and the differential output power reaches 0.66 dBm at the frequency of 15.2 GHz. The measured current dissipation of the VCO core circuit is 9.9 mA. The VCO is fabricated in 0.13 m CMOS process from a 1.2V supply. The total area of layout is 0.56×0.84 mm2.\",\"PeriodicalId\":319991,\"journal\":{\"name\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCPS.2015.7454090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCPS.2015.7454090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband Low Phase Noise 12.4–15.4GHz CMOS voltage controlled oscillator
A Broadband Low Phase Noise 12.4-15.4GHz CMOS LCVCO is presented in this paper. Low Phase Noise is exhibited in the VCO which can realize wider tuning range. A 4-bit switched capacitor array is employed to extend the tuning range. Noise filter technology is adopted to further improve the phase noise. The measured VCO covers frequency band from 12.4GHz to 15.4GHz continuously. The measured phase noise is -119.74 dBc/Hz at 1 MHz offset from carrier frequency of 15.2 GHz and the differential output power reaches 0.66 dBm at the frequency of 15.2 GHz. The measured current dissipation of the VCO core circuit is 9.9 mA. The VCO is fabricated in 0.13 m CMOS process from a 1.2V supply. The total area of layout is 0.56×0.84 mm2.