基于瞬态电荷的SiGe HBTs模型

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441172

Jobymol Jacob, A. DasGupta, A. Chakravorty

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引用次数: 0

摘要

提出了一种基于瞬态积分电荷控制(TICC)关系的硅锗异质结双极晶体管紧凑模型。从数值模拟数据中提取分区因子。基于暂态和交流结果进行了深入的分析，以检验模型的适用性。暂态模拟没有发现收敛问题。该模型在低频至过境频率范围内的相位行为具有可接受的精度。

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Transient charge-based model for SiGe HBTs

A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.

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来源期刊

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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