{"title":"一个0.55 nV//spl径向/(Hz)千兆全差分CMOS前置放大器,用于MR/GMR读取应用","authors":"Zhiliang Zheng, S. Lam, S. Sutardja","doi":"10.1109/ISSCC.2002.992940","DOIUrl":null,"url":null,"abstract":"A low-noise Gb fully differential preamp in 0.25 /spl mu/m CMOS has a variable gain with constant 850 MHz bandwidth, and has a variable bandwidth with constant gain. Noise is <0.55 nV//spl radic/(Hz). The power consumption is 600 mW. The die of a 4-channel IC is <4.2 mm/sup 2/.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 0.55 nV//spl radic/(Hz) gigabit fully-differential CMOS preamplifier for MR/GMR read application\",\"authors\":\"Zhiliang Zheng, S. Lam, S. Sutardja\",\"doi\":\"10.1109/ISSCC.2002.992940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-noise Gb fully differential preamp in 0.25 /spl mu/m CMOS has a variable gain with constant 850 MHz bandwidth, and has a variable bandwidth with constant gain. Noise is <0.55 nV//spl radic/(Hz). The power consumption is 600 mW. The die of a 4-channel IC is <4.2 mm/sup 2/.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.992940\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.992940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.55 nV//spl radic/(Hz) gigabit fully-differential CMOS preamplifier for MR/GMR read application
A low-noise Gb fully differential preamp in 0.25 /spl mu/m CMOS has a variable gain with constant 850 MHz bandwidth, and has a variable bandwidth with constant gain. Noise is <0.55 nV//spl radic/(Hz). The power consumption is 600 mW. The die of a 4-channel IC is <4.2 mm/sup 2/.