GaAs器件在欧洲的活动

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22115

W. Baechtold

{"title":"GaAs器件在欧洲的活动","authors":"W. Baechtold","doi":"10.1109/MWSYM.1988.22115","DOIUrl":null,"url":null,"abstract":"This survey of European GaAs device activities focuses on GaAs MESFETs, HEMTs, and GaInAs JFETs. In all areas significant progress is noted and attributed to advanced processing methods. In the case of the GaInAs JFET, outstanding device results are cited. It is felt that the technology, however, is presently suited to very simple integrated circuits only and that of tools and processes similar to those for MESFETs are needed similar levels of integration to become feasible.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs device activities in Europe\",\"authors\":\"W. Baechtold\",\"doi\":\"10.1109/MWSYM.1988.22115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This survey of European GaAs device activities focuses on GaAs MESFETs, HEMTs, and GaInAs JFETs. In all areas significant progress is noted and attributed to advanced processing methods. In the case of the GaInAs JFET, outstanding device results are cited. It is felt that the technology, however, is presently suited to very simple integrated circuits only and that of tools and processes similar to those for MESFETs are needed similar levels of integration to become feasible.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

这项关于欧洲GaAs器件活动的调查主要集中在GaAs mesfet, hemt和GaInAs jfet上。在所有领域都取得了重大进展，并归功于先进的加工方法。在GaInAs JFET的情况下，引用了出色的器件结果。然而，人们认为该技术目前仅适用于非常简单的集成电路，并且类似于mesfet的工具和工艺需要类似的集成水平才能变得可行。

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GaAs device activities in Europe

This survey of European GaAs device activities focuses on GaAs MESFETs, HEMTs, and GaInAs JFETs. In all areas significant progress is noted and attributed to advanced processing methods. In the case of the GaInAs JFET, outstanding device results are cited. It is felt that the technology, however, is presently suited to very simple integrated circuits only and that of tools and processes similar to those for MESFETs are needed similar levels of integration to become feasible.<>

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来源期刊

1988., IEEE MTT-S International Microwave Symposium Digest

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