L. I. Shchepina, R. Shendrik, T. S. Lasareva, N. Ivanov
{"title":"MgF2和LiF-O,OH晶体中色中心的电子-声子相互作用","authors":"L. I. Shchepina, R. Shendrik, T. S. Lasareva, N. Ivanov","doi":"10.1063/5.0061805","DOIUrl":null,"url":null,"abstract":"Low-temperature absorption spectra at temperatures of range of 7.2–300 K in MgF2 and LiF-O,OH crystals were studied to investigate the electron-phonon interaction of radiation-induced color centers in these crystals. The coupling strength (S) with the phonons of the lattice of electronic-vibrational transitions was determined from the ratio of intensities in the zero-phonon line and the integrated absorption band. The nature of the color centers associated eith the absorption band at 390 nm and the emission at 490 nm in LiF-O,OH crystals and for the absorption band at 370 nm and the emission at 420 nm in MgF2 crystals was determined from value of S.","PeriodicalId":296561,"journal":{"name":"Luminescence and Laser Physics: XVII International Conference on Luminescence and Laser Physics – LLPh 2019","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron-phonon interaction of color centers in MgF2 and LiF-O,OH crystals\",\"authors\":\"L. I. Shchepina, R. Shendrik, T. S. Lasareva, N. Ivanov\",\"doi\":\"10.1063/5.0061805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-temperature absorption spectra at temperatures of range of 7.2–300 K in MgF2 and LiF-O,OH crystals were studied to investigate the electron-phonon interaction of radiation-induced color centers in these crystals. The coupling strength (S) with the phonons of the lattice of electronic-vibrational transitions was determined from the ratio of intensities in the zero-phonon line and the integrated absorption band. The nature of the color centers associated eith the absorption band at 390 nm and the emission at 490 nm in LiF-O,OH crystals and for the absorption band at 370 nm and the emission at 420 nm in MgF2 crystals was determined from value of S.\",\"PeriodicalId\":296561,\"journal\":{\"name\":\"Luminescence and Laser Physics: XVII International Conference on Luminescence and Laser Physics – LLPh 2019\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Luminescence and Laser Physics: XVII International Conference on Luminescence and Laser Physics – LLPh 2019\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0061805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Luminescence and Laser Physics: XVII International Conference on Luminescence and Laser Physics – LLPh 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0061805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron-phonon interaction of color centers in MgF2 and LiF-O,OH crystals
Low-temperature absorption spectra at temperatures of range of 7.2–300 K in MgF2 and LiF-O,OH crystals were studied to investigate the electron-phonon interaction of radiation-induced color centers in these crystals. The coupling strength (S) with the phonons of the lattice of electronic-vibrational transitions was determined from the ratio of intensities in the zero-phonon line and the integrated absorption band. The nature of the color centers associated eith the absorption band at 390 nm and the emission at 490 nm in LiF-O,OH crystals and for the absorption band at 370 nm and the emission at 420 nm in MgF2 crystals was determined from value of S.