I. Soga, Yohei Yagishita, H. Matsumura, Y. Kawano, Toshihide Suzuki, T. Iwai
{"title":"一种用于相控阵汽车雷达的76-81 GHz高效率功率放大器","authors":"I. Soga, Yohei Yagishita, H. Matsumura, Y. Kawano, Toshihide Suzuki, T. Iwai","doi":"10.1109/RFIT.2015.7377922","DOIUrl":null,"url":null,"abstract":"This paper describes the implementation of 76-81 GHz power amplifier (PA) in 65 nm CMOS technology. A customized transistor model enables the designing circuits operating at mm-wave band. The output matching of the PA was composed of low-pass network to reduce both footprint and matching loss. This makes the PA ideal for phased array radars. The measured results at 79 GHz achieved the small signal gain of 25.1 dB, the saturated output power (Psat) of 11.5 dBm, and the power added efficiency (PAE) of 13.6% at the supply voltage of 0.8 V. These results agreed with the simulation.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 76–81 GHz high efficiency power amplifier for phased array automotive radar applications\",\"authors\":\"I. Soga, Yohei Yagishita, H. Matsumura, Y. Kawano, Toshihide Suzuki, T. Iwai\",\"doi\":\"10.1109/RFIT.2015.7377922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the implementation of 76-81 GHz power amplifier (PA) in 65 nm CMOS technology. A customized transistor model enables the designing circuits operating at mm-wave band. The output matching of the PA was composed of low-pass network to reduce both footprint and matching loss. This makes the PA ideal for phased array radars. The measured results at 79 GHz achieved the small signal gain of 25.1 dB, the saturated output power (Psat) of 11.5 dBm, and the power added efficiency (PAE) of 13.6% at the supply voltage of 0.8 V. These results agreed with the simulation.\",\"PeriodicalId\":422369,\"journal\":{\"name\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2015.7377922\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 76–81 GHz high efficiency power amplifier for phased array automotive radar applications
This paper describes the implementation of 76-81 GHz power amplifier (PA) in 65 nm CMOS technology. A customized transistor model enables the designing circuits operating at mm-wave band. The output matching of the PA was composed of low-pass network to reduce both footprint and matching loss. This makes the PA ideal for phased array radars. The measured results at 79 GHz achieved the small signal gain of 25.1 dB, the saturated output power (Psat) of 11.5 dBm, and the power added efficiency (PAE) of 13.6% at the supply voltage of 0.8 V. These results agreed with the simulation.