基于cmos记忆元件的Cascode电流镜设计的可变性分析

Yerassyl Olzhabay, O. Krestinskaya, A. James
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引用次数: 0

摘要

最近,忆阻器件的制造为提高各种模拟和数字架构在片上面积、功耗、稳定性和整体效率方面的性能创造了机会。本文提出了采用0.18 μ m CMOS技术的忆阻级联电流镜设计。我们展示了基于忆阻器的电流反射镜的性能分析,并与传统的基于cmos的设计进行了比较。在SPICE中进行了模拟,包括变异性分析、温度变化和噪声分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Variability analysis of Cascode Current Mirror Designs with CMOS-memristive Components
Recently, an fabrication of memristive devices created an opportunity to improve the performance of various analog and digital architectures in terms of on-chip area, power consumption, stability and overall effectiveness. This paper proposes cascode current mirror design with memristors using $0.18\mu m$ CMOS technology. We show the performance analysis of memristor-based current mirror, comparing to the conventional CMOS-based designs. The simulations have been performed in SPICE, including variability analysis, temperature variations and noise analysis.
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