{"title":"MOSFET与GaAs/AlGaAs异质结构器件量化霍尔电阻的高精度比较[测量单元应用]","authors":"B. Jeckelmann, A. D. Inglis, B. Jeanneret","doi":"10.1109/CPEM.1994.333266","DOIUrl":null,"url":null,"abstract":"We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10/sup 9/ (ppb).<<ETX>>","PeriodicalId":388647,"journal":{"name":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high precision comparison of the quantized Hall resistance of MOSFET and GaAs/AlGaAs heterostructure devices [measurement units application]\",\"authors\":\"B. Jeckelmann, A. D. Inglis, B. Jeanneret\",\"doi\":\"10.1109/CPEM.1994.333266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10/sup 9/ (ppb).<<ETX>>\",\"PeriodicalId\":388647,\"journal\":{\"name\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.1994.333266\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.1994.333266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high precision comparison of the quantized Hall resistance of MOSFET and GaAs/AlGaAs heterostructure devices [measurement units application]
We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10/sup 9/ (ppb).<>
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